| IPD053N06NATMA1 | ||
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| Product description : Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS™ Power Mosfet - TO-252-3 | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 27 nC |
| Pd - Power Dissipation: | 83 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 75 S |
| Series: | IPD053N06 |
| Factory Pack Quantity: | 2500 |
| Part # Aliases: | IPD053N06N IPD053N06NXT SP000962138 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 45 A |
| Rise Time: | 12 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 5.3 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 20 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Datasheet： |
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