IPB014N06NATMA1
IPB014N06NATMA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 60 V 1.4 mOhm 106 nC OptiMOS™ Power Mosfet - D2PAK-7
SPQ：1000
Datasheet :
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Product: OptiMOS Power
Rds On - Drain-Source Resistance: 1.4 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-263-7
Configuration: Single
Unit Weight: 0.056438 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 22 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 47 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Type: OptiMOS Power Transistor
Maximum Operating Temperature: + 175 C
Packaging: Reel
Qg - Gate Charge: 106 nC
Pd - Power Dissipation: 214 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 14 ns
Forward Transconductance - Min: 230 S
Series: IPB014N06
Factory Pack Quantity: 1000
Part # Aliases: IPB014N06N IPB014N06NXT SP000917408
RoHS:  Details
Id - Continuous Drain Current: 180 A
Rise Time: 18 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet：
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