| IPA65R600E6 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
650V,600mΩ,7.3A,N-Channel Power MOSFET
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.1A, 10V |
| Power - Max | 28W |
| Supplier Device Package | PG-TO-220-FP |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 440pF @ 100V |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：