| IMH21T110 | ||
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| 产品描述：
http://www.ameya360.com/product/556499
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| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
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| Emitter- Base Voltage VEBO: | 12 V |
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| Width: | 1.6 mm |
| Packaging: | Reel |
| Continuous Collector Current: | 600 mA |
| DC Collector/Base Gain hfe Min: | 820 |
| Series: | IMH21 |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 3000 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - Pre-Biased |
| Height: | 1.1 mm |
| Mounting Style: | SMD/SMT |
| Frequency - Transition | 150MHz |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Supplier Device Package | SMT6 |
| Package / Case | SC-74, SOT-457 |
| Part Status | Active |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| DC Current Gain hFE Max: | 2700 |
| Peak DC Collector Current: | 600 mA |
| Typical Input Resistor: | 10 kOhms |
| Length: | 2.9 mm |
| Manufacturer: | ROHM Semiconductor |
| Pd - Power Dissipation: | 300 mW |
| Transistor Polarity: | NPN |
| Brand: | ROHM Semiconductor |
| Package / Case: | SMT-6 |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Configuration: | Dual |
| Maximum Operating Temperature: | + 150 C |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Manufacturer | Rohm Semiconductor |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
| Base Part Number | *MH21 |
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