IKW40N120H3 specifications -Ameya360 electronic components purchase network


IKW40N120H3

ACTIVE
Product description : Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; Series: H3
SPQ：1
Datasheet : IKW40N120H3.pdf

Collector-Emitter Saturation Voltage:	2.05 V
Continuous Collector Current Ic Max:	80 A
Series:	IKW40N120
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	240
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Manufacturer:	Infineon
Pd - Power Dissipation:	483 W
Minimum Operating Temperature:	- 40 C
Part # Aliases:	IKW40N120H3FKSA1 IKW40N120H3XK SP000674416
RoHS:	Details
Gate-Emitter Leakage Current:	600 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	+/- 20 V
RoHS	Lead free / RoHS Compliant

Datasheet： IKW40N120H3.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	555768
Mfg name :	Infineon Technologies
MPN :	IKW40N120H3
Product description :	Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; Series: H3

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：