Collector-Emitter Saturation Voltage: | 1.95 V |
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Packaging: | Tube |
Manufacturer: | Infineon |
Pd - Power Dissipation: | 187 W |
Minimum Operating Temperature: | - 40 C |
Part # Aliases: | IKW30N60H3FKSA1 IKW30N60H3XK SP000703042 |
RoHS: | Details |
Gate-Emitter Leakage Current: | 100 nA |
Collector- Emitter Voltage VCEO Max: | 600 V |
Unit Weight: | 0.229281 oz |
Maximum Gate Emitter Voltage: | 20 V |
Width: | 5.31 mm |
Length: | 15.87 mm |
Series: | IKW30N60 |
Continuous Collector Current at 25 C: | 30 A |
Factory Pack Quantity: | 240 |
Brand: | Infineon Technologies |
Package / Case: | TO-247-3 |
Product Category: | IGBT Transistors |
Height: | 20.7 mm |
Mounting Style: | Through Hole |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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