IKW30N60H3 specifications -Ameya360 electronic components purchase network


IKW30N60H3

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Product description : 600V,60A,IGBT with Anti-Parallel Diode
SPQ：240
Datasheet : IKW30N60H3.pdf

Collector-Emitter Saturation Voltage:	1.95 V
Packaging:	Tube
Manufacturer:	Infineon
Pd - Power Dissipation:	187 W
Minimum Operating Temperature:	- 40 C
Part # Aliases:	IKW30N60H3FKSA1 IKW30N60H3XK SP000703042
RoHS:	Details
Gate-Emitter Leakage Current:	100 nA
Collector- Emitter Voltage VCEO Max:	600 V
Unit Weight:	0.229281 oz
Maximum Gate Emitter Voltage:	20 V
Width:	5.31 mm
Length:	15.87 mm
Series:	IKW30N60
Continuous Collector Current at 25 C:	30 A
Factory Pack Quantity:	240
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Product Category:	IGBT Transistors
Height:	20.7 mm
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 150 C

Datasheet： IKW30N60H3.pdf

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Stock code :	555765
Mfg name :	Infineon Technologies
MPN :	IKW30N60H3
Product description :	600V,60A,IGBT with Anti-Parallel Diode

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