| IKW25N120T2 | ||
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| 产品描述：
1200V,50A,IGBT with Anti-Parallel Diode
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.2 V |
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| Packaging: | Tube |
| Length: | 15.9 mm |
| Series: | IKW25N120 |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-247-3 |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 150 C |
| Width: | 5.3 mm |
| Continuous Collector Current Ic Max: | 50 A |
| Manufacturer: | Infineon |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | IKW25N120T2FKSA1 IKW25N120T2XK SP000244960 |
| RoHS: | Details |
| Product Category: | IGBT Transistors |
| Height: | 20.95 mm |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
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