| IKW15N120H3 | ||
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| 产品描述：
1200V,30A,IGBT with Anti-Parallel Diode
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Collector-Emitter Saturation Voltage: | 2.7 V |
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| Manufacturer: | Infineon |
| Pd - Power Dissipation: | 217 W |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | IKW15N120H3FKSA1 IKW15N120H3XK SP000674422 |
| RoHS: | Details |
| Package / Case: | TO-247-3 |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Series: | IKW15N120 |
| Continuous Collector Current at 25 C: | 30 A |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 600 nA |
| Product Category: | IGBT Transistors |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| 数据手册： |
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