IHW30N160R2 specifications -Ameya360 electronic components purchase network


IHW30N160R2

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Product description : 1600V,60A,Reverse Conducting IGBT
SPQ：1
Datasheet : IHW30N160R2.pdf

Collector-Emitter Saturation Voltage:	2.35 V
Packaging:	Tube
Length:	15.9 mm
Series:	IHW30N160
Minimum Operating Temperature:	- 40 C
Part # Aliases:	IHW30N160R2FKSA1 IHW30N160R2XK SP000273701
RoHS:	Details
Product Category:	IGBT Transistors
Height:	20.95 mm
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	+/- 25 V
Width:	5.3 mm
Continuous Collector Current Ic Max:	60 A
Manufacturer:	Infineon
Pd - Power Dissipation:	312 W
Factory Pack Quantity:	240
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Collector- Emitter Voltage VCEO Max:	1.6 kV
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 150 C

Datasheet： IHW30N160R2.pdf

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