| IHW30N160R2 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
1600V,60A,Reverse Conducting IGBT
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 2.35 V |
|---|---|
| Packaging: | Tube |
| Length: | 15.9 mm |
| Series: | IHW30N160 |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | IHW30N160R2FKSA1 IHW30N160R2XK SP000273701 |
| RoHS: | Details |
| Product Category: | IGBT Transistors |
| Height: | 20.95 mm |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 25 V |
| Width: | 5.3 mm |
| Continuous Collector Current Ic Max: | 60 A |
| Manufacturer: | Infineon |
| Pd - Power Dissipation: | 312 W |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-247-3 |
| Collector- Emitter Voltage VCEO Max: | 1.6 kV |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：