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| 产品描述：
FZT651 Series NPN 3 A 60 V SMT Silicon High Performance Transistor - SOT-223
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
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| Width: | 3.7 mm (Max) |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | SOT-223 |
| Gain Bandwidth Product fT: | 175 MHz |
| Unit Weight: | 0.000282 oz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain hFE Max: | 70 |
| Length: | 6.7 mm (Max) |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | NPN |
| Brand: | Diodes Incorporated |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Collector- Base Voltage VCBO: | 80 V |
| Collector-Emitter Saturation Voltage: | 0.43 V |
| Pd - Power Dissipation: | 2 W |
| Height: | 1.65 mm (Max) |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 3 A |
| Continuous Collector Current: | 3 A |
| DC Collector/Base Gain hfe Min: | 70 at 50 mA at 2 V, 100 at 500 mA at 2 V, 80 at 1 A at 2 V, 40 at 2 A at 2 V |
| Series: | FZT651 |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| ECCN | EAR99 |
| 数据手册： |
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