| HGT1S10N120BNST | ||
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| 产品描述：
HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Collector-Emitter Saturation Voltage: | 2.7 V |
| Continuous Collector Current: | 55 A |
| Manufacturer: | Fairchild Semiconductor |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 800 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | +/- 250 nA |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Width: | 9.65 mm |
| Continuous Collector Current Ic Max: | 35 A |
| Length: | 10.67 mm |
| Pd - Power Dissipation: | 298 W |
| Continuous Collector Current at 25 C: | 35 A |
| Brand: | Fairchild Semiconductor |
| Package / Case: | TO-263AB-3 |
| Product Category: | IGBT Transistors |
| Height: | 4.83 mm |
| Unit Weight: | 0.046296 oz |
| Maximum Operating Temperature: | + 150 C |
| ECCN | EAR99 |
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