IRF3808STRLPBF specifications -Ameya360 electronic components purchase network


IRF3808STRLPBF

ACTIVE D2PAK
Product description : Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3
SPQ：800
Datasheet : IRF3808STRLPBF.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max	200W
Supplier Device Package	D2PAK
Gate Charge (Qg) @ Vgs	220nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	HEXFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	5310pF @ 25V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	7 mOhm @ 82A, 10V
PCN Assembly/Origin	Alternate Assembly Site 11/Nov/2013
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	106A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 250µA
Packaging	Tape & Reel (TR)

Datasheet： IRF3808STRLPBF.pdf

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Stock code :	5448
Mfg name :	Infineon Technologies
MPN :	IRF3808STRLPBF
Product description :	Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3

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