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| 产品描述：
Single N-Channel 25 V 32 mOhm 53 nC HEXFET® Power Mosfet - DirectFET®
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| 标准包装：4800 | ||
| 数据手册： | ||
| ECAD模型:
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| Power - Max | 2.8W |
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| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 32A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| FET Feature | Standard |
| Supplier Device Package | DIRECTFET™ MX |
| Gate Charge (Qg) @ Vgs | 53nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 4280pF @ 13V |
| ECCN | EAR99 |
| 数据手册： |
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