FQA90N15 specifications -Ameya360 electronic components purchase network


FQA90N15

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Product description : FQA90N15 , N沟道 MOSFET 晶体管, 90 A, Vds=150 V, 3针 TO-3PN封装
SPQ：1
Datasheet : FQA90N15.pdf

Rds On - Drain-Source Resistance:	18 mOhms
Width:	5 mm
Pd - Power Dissipation:	375 W
Package / Case:	TO-3P-3
Configuration:	Single
Unit Weight:	0.225789 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	105 ns
Forward Transconductance - Min:	68 S
Series:	QFET
Factory Pack Quantity:	450
Brand:	Fairchild Semiconductor
Typical Turn-Off Delay Time:	470 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Type:	MOSFET
Maximum Operating Temperature:	+ 175 C
Packaging:	Bulk
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	18.9 mm
Vgs - Gate-Source Voltage:	25 V
Mounting Style:	Through Hole
Fall Time:	410 ns
Length:	15.8 mm
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	FQA90N15_NL
RoHS:	Details
Id - Continuous Drain Current:	90 A
Rise Time:	760 ns
Transistor Type:	1 N-Channel

Datasheet： FQA90N15.pdf

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Stock code :	534467
Mfg name :	onsemi
MPN :	FQA90N15
Product description :	FQA90N15 , N沟道 MOSFET 晶体管, 90 A, Vds=150 V, 3针 TO-3PN封装

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