Rds On - Drain-Source Resistance: | 7 mOhms |
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Width: | 5 mm |
Pd - Power Dissipation: | 375 W |
Package / Case: | TO-3P-3 |
Configuration: | Single |
Unit Weight: | 0.225789 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 85 ns |
Forward Transconductance - Min: | 92 S |
Series: | QFET |
Factory Pack Quantity: | 450 |
Brand: | Fairchild Semiconductor |
Typical Turn-Off Delay Time: | 260 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Type: | MOSFET |
Maximum Operating Temperature: | + 175 C |
Packaging: | Bulk |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 18.9 mm |
Vgs - Gate-Source Voltage: | 25 V |
Mounting Style: | Through Hole |
Fall Time: | 410 ns |
Length: | 15.8 mm |
Manufacturer: | Fairchild Semiconductor |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | FQA160N08_NL |
RoHS: | Details |
Id - Continuous Drain Current: | 160 A |
Rise Time: | 970 ns |
Transistor Type: | 1 N-Channel |
数据手册: |
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