FMM110-015X2F specifications -Ameya360 electronic components purchase network


FMM110-015X2F

ACTIVE EAR99
Product description : 150V 53A 20 mOhms N-ch ISOPLUS i4-PAC
SPQ：25
Datasheet : FMM110-015X2F.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	20 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	ISOPLUS-i4-5
Height:	21.34 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	18 ns
Length:	20.29 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	53 A
Rise Time:	16 ns
Transistor Type:	2 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	150 nC
Pd - Power Dissipation:	180 W
Tradename:	TrenchT2
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Configuration:	Dual
Unit Weight:	0.229281 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	33 ns
Forward Transconductance - Min:	75 S
Series:	FMM110-015X2F
Factory Pack Quantity:	25
Typical Turn-Off Delay Time:	33 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Type:	TrenchT2 HiperFET N-Channel Power MOSFET
Maximum Operating Temperature:	+ 175 C

Datasheet： FMM110-015X2F.pdf

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