| EMC4DXV5T1G | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Complementary Bipolar Digital Transistor (BRT)
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Package / Case | SOT-553 |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SOT-553 |
| Part Status | Obsolete |
| Manufacturer | ON Semiconductor |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Tape & Reel (TR) |
| Resistor - Base (R1) (Ohms) | 47k, 10k |
| Power - Max | 500mW |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| Current - Collector (Ic) (Max) | 100mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
登录之后就可发表评论
请输入下方图片中的验证码：