FJV3113RMTF specifications -Ameya360 electronic components purchase network


FJV3113RMTF

ACTIVE SOT-23-3 (TO-236) ECL99
Product description : TRANS PREBIAS NPN 200MW SOT23-3
SPQ：3000
Datasheet : FJV3113RMTF.pdf

Resistor - Base (R1) (Ohms)	2.2k
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Power - Max	200mW
Resistor - Emitter Base (R2) (Ohms)	47k
Current - Collector (Ic) (Max)	100mA
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
ECCN	ECL99
Frequency - Transition	250MHz
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Type	NPN - Pre-Biased
Supplier Device Package	SOT-23-3 (TO-236)
Part Status	Active
Manufacturer	Fairchild Semiconductor
Family	Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max)	100nA (ICBO)
Packaging	Digi-Reel®

Datasheet： FJV3113RMTF.pdf

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