| FGY75N60SMD | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: IGBT; 600V; 75A; 375W; TO247-3
|
||
| 标准包装：450 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Manufacturer: | Fairchild Semiconductor |
|---|---|
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Pd - Power Dissipation: | 750 W |
| Brand: | Fairchild Semiconductor |
| Gate-Emitter Leakage Current: | 400 nA |
| Product Category: | IGBT Transistors |
| Unit Weight: | 0.269105 oz |
| Maximum Gate Emitter Voltage: | 20 V |
| Packaging: | Bulk |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: | 450 |
| RoHS: | Details |
| Package / Case: | Power-247 |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：