| FGA40N65SMD | ||
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| 产品描述：
FGA40N65SMD Series 650 V 40 A Field Stop IGBT - TO-3PN
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| 标准包装：450 | ||
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- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | 2.5 V |
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| Manufacturer: | Fairchild Semiconductor |
| Pd - Power Dissipation: | 349 W |
| Brand: | Fairchild Semiconductor |
| Gate-Emitter Leakage Current: | 400 nA |
| Product Category: | IGBT Transistors |
| Unit Weight: | 0.225789 oz |
| Maximum Gate Emitter Voltage: | 20 V |
| Packaging: | Bulk |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 450 |
| RoHS: | Details |
| Package / Case: | TO-3PN |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| 数据手册： |
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