FDMS86200 specifications -Ameya360 electronic components purchase network


FDMS86200

ACTIVE EAR99
Product description : N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56
SPQ：1
Datasheet : FDMS86200.pdf
ECAD Model:

Qg - Gate Charge:	33 nC
Packaging:	Reel
Pd - Power Dissipation:	104 W
Package / Case:	Power56-8
Configuration:	Single
Unit Weight:	0.002402 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	13 ns
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	N-Channel
Brand:	Fairchild Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	52 A
Rise Time:	7.9 ns
Type:	N-Channel Power Trench MOSFET
ECCN	EAR99
Rds On - Drain-Source Resistance:	15 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	+/- 20 V
Mounting Style:	SMD/SMT
Fall Time:	5.8 ns
Forward Transconductance - Min:	33 S
Series:	PowerTrench
Factory Pack Quantity:	3000
Typical Turn-Off Delay Time:	27 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： FDMS86200.pdf

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Stock code :	529202
Mfg name :	onsemi
MPN :	FDMS86200
Product description :	N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56

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