FDD2670
FDD2670
  • 量产中
  • ECL99
产品描述:
FDD2670 , N沟道 MOSFET 晶体管, 3.6 A, Vds=200 V, 3针 TO-252封装
标准包装:1
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Rds On - Drain-Source Resistance: 130 mOhms
Width: 6.22 mm
Pd - Power Dissipation: 3.2 W
Package / Case: TO-252-3
Configuration: Single
Unit Weight: 0.009184 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 13 ns
Forward Transconductance - Min: 15 S
Series: PowerTrench
Factory Pack Quantity: 2500
Brand: Fairchild Semiconductor
Typical Turn-Off Delay Time: 30 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 200 V
Type: MOSFET
Maximum Operating Temperature: + 150 C
Packaging: Reel
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 2.39 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 25 ns
Length: 6.73 mm
Manufacturer: Fairchild Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: FDD2670_NL
RoHS:  Details
Id - Continuous Drain Current: 3.6 A
Rise Time: 8 ns
Transistor Type: 1 N-Channel
ECCN ECL99
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库存信息2到货提醒

供应商编码:SP1027

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

$1.276

10.59801

库存数量暂无
订货周期33Weeks
Supplier SPQ/MOQ1/2500
库存地--
生产批次2016

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