FDB110N15A
  • 量产中
  • EAR99
产品描述:
N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3
标准包装:1
数据手册: --
ECAD模型:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Packaging: Reel
Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 9.25 mOhms
Manufacturer: Fairchild Semiconductor
Pd - Power Dissipation: 234 W
Factory Pack Quantity: 800
Brand: Fairchild Semiconductor
Package / Case: TO-252-3
Id - Continuous Drain Current: 92 A
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
ECCN EAR99
Fall Time: 14 ns
Forward Transconductance - Min: 118 S
Qg - Gate Charge: 47 nC
Series: PowerTrench
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 26 ns
Unit Weight: 0.046296 oz
Mounting Style: SMD/SMT
登录之后就可发表评论