FCX591TA | ||
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产品描述:
FCX591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-89
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标准包装:1000 | ||
数据手册: |
Collector- Base Voltage VCBO: | - 80 V |
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Collector-Emitter Saturation Voltage: | - 0.6 V |
Minimum Operating Temperature: | - 65 C |
Package / Case: | SOT-89 |
Gain Bandwidth Product fT: | 150 MHz |
Unit Weight: | 0.001834 oz |
Emitter- Base Voltage VEBO: | - 5 V |
DC Current Gain hFE Max: | 100 at 1 mA at 5 V |
Length: | 4.5 mm |
Manufacturer: | Diodes Incorporated |
Transistor Polarity: | PNP |
Brand: | Diodes Incorporated |
Product Category: | Bipolar Transistors - BJT |
Maximum Operating Temperature: | + 150 C |
Width: | 2.5 mm |
Packaging: | Reel |
Pd - Power Dissipation: | 1 W |
Height: | 1.5 mm |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Maximum DC Collector Current: | 1 A |
Continuous Collector Current: | - 1 A |
DC Collector/Base Gain hfe Min: | 100 at 1 mA at 5 V, 100 at 500 mA at 5 V, 80 at 1 A at 5 V, 15 at 2 A at 5 V |
Series: | FCX59 |
Factory Pack Quantity: | 1000 |
RoHS: | Details |
Collector- Emitter Voltage VCEO Max: | - 60 V |
ECCN | EAR99 |
数据手册: |
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