| FCX591TA | ||
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| 产品描述：
FCX591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-89
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| 标准包装：1000 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | - 80 V |
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| Collector-Emitter Saturation Voltage: | - 0.6 V |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | SOT-89 |
| Gain Bandwidth Product fT: | 150 MHz |
| Unit Weight: | 0.001834 oz |
| Emitter- Base Voltage VEBO: | - 5 V |
| DC Current Gain hFE Max: | 100 at 1 mA at 5 V |
| Length: | 4.5 mm |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | PNP |
| Brand: | Diodes Incorporated |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 2.5 mm |
| Packaging: | Reel |
| Pd - Power Dissipation: | 1 W |
| Height: | 1.5 mm |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 1 A |
| Continuous Collector Current: | - 1 A |
| DC Collector/Base Gain hfe Min: | 100 at 1 mA at 5 V, 100 at 500 mA at 5 V, 80 at 1 A at 5 V, 15 at 2 A at 5 V |
| Series: | FCX59 |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | - 60 V |
| ECCN | EAR99 |
| 数据手册： |
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