FCX591TA specifications -Ameya360 electronic components purchase network


FCX591TA

ACTIVE EAR99
Product description : FCX591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-89
SPQ：1000
Datasheet : FCX591TA.pdf

Collector- Base Voltage VCBO:	- 80 V
Collector-Emitter Saturation Voltage:	- 0.6 V
Minimum Operating Temperature:	- 65 C
Package / Case:	SOT-89
Gain Bandwidth Product fT:	150 MHz
Unit Weight:	0.001834 oz
Emitter- Base Voltage VEBO:	- 5 V
DC Current Gain hFE Max:	100 at 1 mA at 5 V
Length:	4.5 mm
Manufacturer:	Diodes Incorporated
Transistor Polarity:	PNP
Brand:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	2.5 mm
Packaging:	Reel
Pd - Power Dissipation:	1 W
Height:	1.5 mm
Configuration:	Single
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	1 A
Continuous Collector Current:	- 1 A
DC Collector/Base Gain hfe Min:	100 at 1 mA at 5 V, 100 at 500 mA at 5 V, 80 at 1 A at 5 V, 15 at 2 A at 5 V
Series:	FCX59
Factory Pack Quantity:	1000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 60 V
ECCN	EAR99

Datasheet： FCX591TA.pdf

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Stock code :	528706
Mfg name :	Diodes Incorporated
MPN :	FCX591TA
Product description :	FCX591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-89

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