IRF2804S-7PPBF specifications -Ameya360 electronic components purchase network


IRF2804S-7PPBF

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Product description : IRF2804S-7PPBF , N沟道 MOSFET 晶体管, 320 A, Vds=40 V, 7针 D2PAK封装
SPQ：1
Datasheet : IRF2804S-7PPBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	1.6 mOhms
Pd - Power Dissipation:	330 W
Package / Case:	TO-263-7
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	105 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	320 A
Rise Time:	150 ns
Type:	Automotive Mosfet
Qg - Gate Charge:	170 nC
Packaging:	Tube
Technology:	Si
Configuration:	Single Quint Source
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	17 ns
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	110 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IRF2804S-7PPBF.pdf

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Stock code :	52737
Mfg name :	Infineon Technologies
MPN :	IRF2804S-7PPBF
Product description :	IRF2804S-7PPBF , N沟道 MOSFET 晶体管, 320 A, Vds=40 V, 7针 D2PAK封装

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