SS8550CBU specifications -Ameya360 electronic components purchase network


SS8550CBU

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Product description : -25V,-1.5A,1W,PNP Epitaxial Transistor
SPQ：1
Datasheet : SS8550CBU.pdf

Packaging:	Bulk
Width:	3.93 mm
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-92
Gain Bandwidth Product fT:	200 MHz
Unit Weight:	0.006314 oz
Emitter- Base Voltage VEBO:	- 6 V
DC Current Gain hFE Max:	300
Length:	4.7 mm
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	10000
Part # Aliases:	SS8550CBU_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	- 40 V
Collector-Emitter Saturation Voltage:	- 0.28 V
Pd - Power Dissipation:	1 W
Height:	4.7 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	1.5 A
Continuous Collector Current:	- 1.5 A
DC Collector/Base Gain hfe Min:	85
Transistor Polarity:	PNP
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 25 V

Datasheet： SS8550CBU.pdf

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Stock code :	51402
Mfg name :	onsemi
MPN :	SS8550CBU
Product description :	-25V,-1.5A,1W,PNP Epitaxial Transistor

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