BSS138-7-F
  • 量产中
  • SOT-23-3
产品描述:
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
标准包装:1
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Rds On (Max) @ Id, Vgs 3.5 Ohm @ 220mA, 10V
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
封装/外壳 TO-236-3,SC-59,SOT-23-3
FET 功能 逻辑电平门
供应商器件封装 SOT-23-3
电流 - 连续漏极(Id)(25°C 时) 200mA(Ta)
漏源极电压(Vdss) 50V
Operating Temperature -55°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power Dissipation (Max) 300mW (Ta)
Technology MOSFET (Metal Oxide)
Manufacturer Diodes Incorporated
Part Status Active
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
FET Type N-Channel
Vgs(th) (Max) @ Id 1.5V @ 250µA
安装类型 表面贴装
FET 类型 MOSFET N 通道,金属氧化物
不同 Id 时的 Vgs(th)(最大值) 1.5V @ 250µA
不同 Id,Vgs 时的 Rds On(最大值) 3.5 欧姆 @ 220mA,10V
不同 Vds 时的输入电容(Ciss) 50pF @ 10V
功率 - 最大值 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power Dissipation (Max) 300mW (Ta)
Technology MOSFET (Metal Oxide)
Manufacturer Diodes Incorporated
Part Status Active
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
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