DMN65D8L-7 specifications -Ameya360 electronic components purchase network


DMN65D8L-7

ACTIVE EAR99
Product description : DMN65D8L: 60 V 3 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
SPQ：3000
Datasheet : DMN65D8L-7.pdf

Qg - Gate Charge:	870 pC
Packaging:	Reel
Pd - Power Dissipation:	370 mW
Package / Case:	SOT-23-3
Configuration:	1 N-Channel
Unit Weight:	0.000282 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	2.7 ns
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	12.6 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	60 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	2 Ohms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Vgs - Gate-Source Voltage:	+/- 20 V
Mounting Style:	SMD/SMT
Fall Time:	7.3 n
Forward Transconductance - Min:	80 mS
Series:	DMN63
Factory Pack Quantity:	3000
Brand:	Diodes Incorporated
RoHS:	Details
Id - Continuous Drain Current:	310 mA
Rise Time:	2.8 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： DMN65D8L-7.pdf

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Stock code :	489213
Mfg name :	Diodes Incorporated
MPN :	DMN65D8L-7
Product description :	DMN65D8L: 60 V 3 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3

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