| DMN6040SVT-7 | ||
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| 产品描述：
N-Channel 60 V 44 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 22.4 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1.2 W |
| Package / Case: | TSOT-23-6 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 4.5 S |
| Series: | DMN60 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 5 A |
| Rise Time: | 8.1 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 6.6 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 20.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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