DMN3190LDW-13
DMN3190LDW-13
  • ACTIVE
  • SOT-363
  • EAR99
Product description : Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363
SPQ:1
Datasheet : --
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FET Feature Logic Level Gate
Package / Case 6-TSSOP, SC-88, SOT-363
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1A
Part Status Active
Manufacturer Diodes Incorporated
Family Transistors - FETs, MOSFETs - Arrays
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 87pF @ 20V
ECCN EAR99
Rds On (Max) @ Id, Vgs 190 mOhm @ 1.3A, 10V
Power - Max 320mW
Supplier Device Package SOT-363
Gate Charge (Qg) @ Vgs 2nC @ 10V
Category Discrete Semiconductor Products
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.8V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape (CT)
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stock20000Update On
2025-07-08
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SPQ/MOQ1/1
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