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| 产品描述：
N-Channel 20 V 80 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
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| 标准包装：3000 | ||
| 数据手册： |
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| Qg - Gate Charge: | 1.6 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 430 mW |
| Package / Case: | SOT-23-3 |
| Vgs - Gate-Source Voltage: | 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 13 ns |
| Forward Transconductance - Min: | 40 mS |
| Series: | DMN22 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.4 A |
| Rise Time: | 2.8 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 175 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.000282 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 3.5 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 38 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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