DMN2028USS-13
  • ACTIVE
  • ECL99
Product description : Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8
SPQ:1
Datasheet :
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Qg - Gate Charge: 11.6 nC
Packaging: Reel
Pd - Power Dissipation: 1.56 W
Package / Case: SOIC-8
Vgs - Gate-Source Voltage: 12 V
Mounting Style: SMD/SMT
Fall Time: 12.33 ns
Forward Transconductance - Min: 16 S
Series: DMN2028
Factory Pack Quantity: 2500
Brand: Diodes Incorporated
RoHS:  Details
Id - Continuous Drain Current: 9.8 A
Rise Time: 12.49 ns
Transistor Type: 1 N-Channel
ECCN ECL99
Rds On - Drain-Source Resistance: 20 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Configuration: Single
Unit Weight: 0.002610 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 11.67 ns
Manufacturer: Diodes Incorporated
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 35.89 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 20 V
Type: N-Channel Enhancement Mode MOSFET
Maximum Operating Temperature: + 150 C
Datasheet:
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Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock2500Update On
2025-06-13
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SPQ/MOQ1/1
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.22649

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Lead-Time45Weeks
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