DMN2016LHAB-7 specifications -Ameya360 electronic components purchase network


DMN2016LHAB-7

ACTIVE U-DFN2030-6 ECL99
Product description : DMN2016LHAB-7, 双 N沟道 MOSFET 晶体管, 7.5 A, Vds=20 V, 6针 U-DFN2030封装
SPQ：3000
Datasheet : DMN2016LHAB-7.pdf

Package / Case	6-UDFN Exposed Pad
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.5A
Part Status	Active
Manufacturer	Diodes Incorporated
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1550pF @ 10V
ECCN	ECL99
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 4A, 4.5V
Power - Max	1.2W
Supplier Device Package	U-DFN2030-6
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	2 N-Channel (Dual) Common Drain
Vgs(th) (Max) @ Id	1.1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)

Datasheet： DMN2016LHAB-7.pdf

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Stock code :	489106
Mfg name :	Diodes Incorporated
MPN :	DMN2016LHAB-7
Product description :	DMN2016LHAB-7, 双 N沟道 MOSFET 晶体管, 7.5 A, Vds=20 V, 6针 U-DFN2030封装

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