| DMG6898LSD-13 | ||
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| 产品描述：
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 11 mOhms, 11 mOhms |
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| Product: | MOSFET Small Signal |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV, 500 mV |
| Vgs - Gate-Source Voltage: | +/- 12 V, +/- 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12.33 ns, 12.33 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 35.89 ns, 35.89 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 20 V |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Qg - Gate Charge: | 26 nC, 26 nC |
| Pd - Power Dissipation: | 1.28 W |
| Package / Case: | SO-8 |
| Configuration: | 2 N-Channel |
| Unit Weight: | 0.002610 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 11.67 ns, 11.67 ns |
| Series: | DMG6898 |
| Factory Pack Quantity: | 2500 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 9.5 A, 9.5 A |
| Rise Time: | 12.49 ns, 12.49 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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