DMG4N65CT specifications -Ameya360 electronic components purchase network


DMG4N65CT

ACTIVE TO-220-3 EAR99
Product description : DMG4N65CT , N沟道 MOSFET 晶体管, 4 A, Vds=650 V, 3针 TO-220封装
SPQ：50
Datasheet : DMG4N65CT.pdf

Package / Case	TO-220-3
FET Feature	Standard
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Part Status	Active
Manufacturer	Diodes Incorporated
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	900pF @ 25V
ECCN	EAR99
Rds On (Max) @ Id, Vgs	3 Ohm @ 2A, 10V
Power - Max	2.19W
Supplier Device Package	TO-220-3
Gate Charge (Qg) @ Vgs	13.5nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube

Datasheet： DMG4N65CT.pdf

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Stock code :	489044
Mfg name :	Diodes Incorporated
MPN :	DMG4N65CT
Product description :	DMG4N65CT , N沟道 MOSFET 晶体管, 4 A, Vds=650 V, 3针 TO-220封装

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