| DMG1016V-7 | ||
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| 产品描述：
N & P Channel 400 mΩ 20 Vds Complementary Pair Enhancement Mode Mosfet - SOT-563
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 700 mOhms, 1.3 Ohms |
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| Product: | MOSFET Small Signal |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Unit Weight: | 0.000106 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 5.1 ns, 5.1 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel, P-Channel |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 870 mA, 640 mA |
| Rise Time: | 7.4 nS, 8.1 nS |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 736.6 pC, 622.4 pC |
| Pd - Power Dissipation: | 530 mW |
| Package / Case: | SOT-563-6 |
| Vgs - Gate-Source Voltage: | 6 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12.3 ns, 20.7 ns |
| Forward Transconductance - Min: | 1.4 S, - 0.9 S |
| Series: | DMG1016 |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 26.7 nS, 28.4 nS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 20 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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