| DMC2990UDJ-7 | ||
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| 产品描述：
Dual N/P-Channel 20 V 2.4/5 Ohm 0.5/0.4 nC 350 mW Silicon SMT Mosfet SOT-963
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| 标准包装：10000 | ||
| 数据手册： |
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| Qg - Gate Charge: | 0.4 nC, 0.5 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 350 mW |
| Package / Case: | SOT-963-6 |
| Configuration: | N-Channel, P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 6.4 ns, 16.4 ns |
| Forward Transconductance - Min: | 180 mS, 100 mS |
| Series: | DMC2990 |
| Factory Pack Quantity: | 10000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 450 mA |
| Rise Time: | 3.3 ns, 5.7 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 1.9 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | +/- 1 V |
| Vgs - Gate-Source Voltage: | 8 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 4 ns, 5.8 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 19 ns, 31.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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