| CSD19531KCS | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
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| 标准包装：50 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 38 nC |
| Pd - Power Dissipation: | 179 W |
| Tradename: | NexFET |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 4.1 ns |
| Manufacturer: | Texas Instruments |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 16 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 7.7 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8.4 ns |
| Series: | CSD19531KCS |
| Factory Pack Quantity: | 50 |
| Brand: | Texas Instruments |
| RoHS: | Details |
| Id - Continuous Drain Current: | 105 A |
| Rise Time: | 7.2 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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