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| 产品描述：
Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
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| 标准包装：50 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 60A, 10V |
| Power - Max | 217W |
| Supplier Device Package | TO-220-3 |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 3980pF @ 40V |
| 数据手册： |
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