Packaging: | Reel |
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Qg - Gate Charge: | 5.1 nC |
Pd - Power Dissipation: | 2.7 W |
Tradename: | NexFET |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Vgs - Gate-Source Voltage: | 8 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 4.5 ns |
Manufacturer: | Texas Instruments |
Transistor Polarity: | N-Channel |
Channel Mode: | Depletion |
Typical Turn-Off Delay Time: | 11 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Transistor Type: | 1 N-Channel |
ECCN | ECL99 |
Rds On - Drain-Source Resistance: | 9.3 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | WSON-FET-6 |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Fall Time: | 13.6 ns |
Forward Transconductance - Min: | 44 S |
Series: | CSD13202Q2 |
Factory Pack Quantity: | 3000 |
Brand: | Texas Instruments |
RoHS: | Details |
Id - Continuous Drain Current: | 14.4 A |
Rise Time: | 28 ns |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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