CSD13202Q2 specifications -Ameya360 electronic components purchase network


CSD13202Q2

ACTIVE ECL99
Product description : XST MOSFET N-CH 12V 76A 6SON
SPQ：3000
Datasheet : CSD13202Q2.pdf

Packaging:	Reel
Qg - Gate Charge:	5.1 nC
Pd - Power Dissipation:	2.7 W
Tradename:	NexFET
Vgs th - Gate-Source Threshold Voltage:	800 mV
Vgs - Gate-Source Voltage:	8 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	4.5 ns
Manufacturer:	Texas Instruments
Transistor Polarity:	N-Channel
Channel Mode:	Depletion
Typical Turn-Off Delay Time:	11 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	12 V
Transistor Type:	1 N-Channel
ECCN	ECL99
Rds On - Drain-Source Resistance:	9.3 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	WSON-FET-6
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	13.6 ns
Forward Transconductance - Min:	44 S
Series:	CSD13202Q2
Factory Pack Quantity:	3000
Brand:	Texas Instruments
RoHS:	Details
Id - Continuous Drain Current:	14.4 A
Rise Time:	28 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： CSD13202Q2.pdf

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