FDS6675BZ specifications -Ameya360 electronic components purchase network


FDS6675BZ

ACTIVE 8-SO
Product description : P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8
SPQ：1
Datasheet : FDS6675BZ.pdf

FET Feature	Logic Level Gate
Package / Case	8-SOIC (0.154", 3.90mm Width)
Power - Max	1W
Supplier Device Package	8-SO
Gate Charge (Qg) @ Vgs	62nC @ 10V
FET Type	MOSFET P-Channel, Metal Oxide
Series	PowerTrench®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	2470pF @ 15V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	13 mOhm @ 11A, 10V
PCN Assembly/Origin	Wafer 6/8 Inch Addition 16/Jun/2014
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
PCN Design/Specification	Mold Compound 12/Dec/2007
Online Catalog	P-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	3V @ 250µA
Packaging	Tape & Reel (TR)

Datasheet： FDS6675BZ.pdf

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Stock code :	44614
Mfg name :	onsemi
MPN :	FDS6675BZ
Product description :	P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8

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