| IPP600N25N3GXKSA1 | ||
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| Product description : Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Tube |
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| Qg - Gate Charge: | 29 nC |
| Pd - Power Dissipation: | 136 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 24 S |
| Series: | XPP600N25 |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 22 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 51 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | G IPP600N25N3 IPP600N25N3GXK SP000677832 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 25 A |
| Rise Time: | 10 ns |
| Maximum Operating Temperature: | + 175 C |
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| stock | 500 | Update On 2025-06-24 |
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| Lead-Time | -- | |
| SPQ/MOQ | 1/1 | |
| Location | -- | |
| DateCode | 2334 |
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