IPP114N12N3GXKSA1 | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 120V; 300A; 136W; PG-TO220-3
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标准包装:1 | ||
数据手册: -- |
FET Feature | Standard |
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Package / Case | TO-220-3 |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Part Status | Active |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Packaging | Tube |
Rds On (Max) @ Id, Vgs | 11.4 mOhm @ 75A, 10V |
Power - Max | 136W |
Supplier Device Package | TO-220-3 |
Gate Charge (Qg) @ Vgs | 65nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Through Hole |
Input Capacitance (Ciss) @ Vds | 4310pF @ 60V |
ECCN | EAR99 |
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