| IPD220N06L3GBTMA1 | ||
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| Product description : Single N-Channel 60 V 22 mOhm 7 nC OptiMOS™ Power Mosfet - DPAK | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 2.2V @ 11µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 30A, 10V |
| Power - Max | 36W |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 30V |
| ECCN | EAR99 |
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