| IPD082N10N3GATMA1 | ||
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| Product description : Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 73A, 10V |
| Power - Max | 125W |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3980pF @ 50V |
| ECCN | EAR99 |
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