| BSS308PEH6327XTSA1 | ||
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| 产品描述：
Single P-Channel 30 V 80 mOhm 5 nC OptiMOS™ Small Signal Mosfet - SOT-23
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| 标准包装：3000 | ||
| 数据手册： -- |
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| Packaging: | Reel |
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| Qg - Gate Charge: | - 5 nC |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | SOT-23-3 |
| Configuration: | 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 2.8 ns |
| Forward Transconductance - Min: | 4.6 S |
| Series: | BSS308 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 15.3 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 130 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 1.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5.6 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSS308PE BSS308PEH6327XT H6327 SP000928942 |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 2 A |
| Rise Time: | 7.7 ns |
| Maximum Operating Temperature: | + 150 C |
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