| BSC883N03LSGATMA1 | ||
|---|---|---|
|
|
||
|
||
| Product description : Single N-Channel 34 V 3.8 mOhm 34 nC OptiMOS™ Power Mosfet - TDSON-8 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 34V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 98A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 30A, 10V |
| Power - Max | 57W |
| Supplier Device Package | PG-TDSON-8 |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2800pF @ 15V |
| ECCN | EAR99 |
You can comment after logging in.
Please enter the verification code in the image below：