| SQD50P06-15L_GE3 | ||
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| Product description : Single P-Channel 60 V 0.032 Ohm 150 nC 136 W Silicon SMT Mosfet - TO-252-3 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
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| Qg - Gate Charge: | 98 nC |
| Series: | SQ |
| Transistor Polarity: | P-Channel |
| Technology: | Si |
| Tradename: | TrenchFET |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | - 50 A |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 15.5 mOhms |
| Manufacturer: | Vishay |
| Pd - Power Dissipation: | 136 W |
| Factory Pack Quantity: | 2000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | - 2.5 V |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Maximum Operating Temperature: | + 175 C |
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